GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

Gallium nitride active layers co-doped in situ with magnesium and europium, GaN (Mg): Eu,
show strong red photoluminescence (PL), promising for red light emitting diode (LED) …

Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid
density-functional defect calculations. This includes the interaction between the rare-earth …

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin
layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference …

Europium doped Ga 2 O 3 films were deposited on sapphire substrates by using pulsed
laser deposition. The influences of substrate temperature on structural and optical properties …

The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for
semiconductor composites with a wide range of potential optical, electrical, and thermal …

Mg codoping into Eu-doped GaN (GaN: Eu) changed the dominant optical site and
increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of …

Mg codoping into Eu-doped GaN strongly affects the two dominant optical sites A (620.3 nm)
and B (622.3 nm) and dramatically improves the optical characteristics obtained from Eu 3+ …

High‐concentration doping of Eu ions working as luminescent centers in GaN is required to
improve light output of optical devices. GaN nanocolumns can be used to achieve high …