Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers
In this work an extensive characterization over XeCl multishot laser irradiation was
performed at different energy densities and with different thicknesses of graphitic coating …
performed at different energy densities and with different thicknesses of graphitic coating …
Study on purification technology of silicon carbide crystal growth powder
G Fan, T Li, L Zhao, S Zhang - Materials, 2022 - mdpi.com
Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material, and its preparation
process has strict requirements on the purity of raw materials. A self-developed medium …
process has strict requirements on the purity of raw materials. A self-developed medium …
Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing
The study aimed to extensively characterize the effects of XeCl multishot laser irradiation on
P and Al implanted 4H-SiC epitaxial layers with varying thicknesses of graphitic coating at …
P and Al implanted 4H-SiC epitaxial layers with varying thicknesses of graphitic coating at …
Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing
F Mazzamuto, Z Chehadi, F Roze… - Solid State …, 2024 - Trans Tech Publ
This paper demonstrates for the first time a new annealing scheme to form p-type junctions
in SiC by high temperature ion implantation followed by laser annealing without the use of a …
in SiC by high temperature ion implantation followed by laser annealing without the use of a …