Efficiency models for GaN-based light-emitting diodes: Status and challenges
J Piprek - Materials, 2020 - mdpi.com
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …
various applications in lighting, displays, biotechnology, and other fields. However, their …
A first-principles understanding of point defects and impurities in GaN
JL Lyons, D Wickramaratne… - Journal of Applied …, 2021 - pubs.aip.org
Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Predicting and designing optical properties of inorganic materials
JM Rondinelli, E Kioupakis - Annual Review of Materials …, 2015 - annualreviews.org
Modern first-principles calculations based on density functional theory and related
techniques enable the predictive modeling of the linear and nonlinear optical properties of …
techniques enable the predictive modeling of the linear and nonlinear optical properties of …
[HTML][HTML] Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
E Kioupakis, Q Yan, D Steiauf… - New Journal of …, 2013 - iopscience.iop.org
Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their
performance at high power is affected by the efficiency-droop problem. Previous …
performance at high power is affected by the efficiency-droop problem. Previous …
First-principles calculations of indirect Auger recombination in nitride semiconductors
Auger recombination is an important nonradiative carrier recombination mechanism in many
classes of optoelectronic devices. The microscopic Auger processes can be either direct or …
classes of optoelectronic devices. The microscopic Auger processes can be either direct or …
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact
We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN
substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was …
substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was …
Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
M Kawaguchi, O Imafuji, S Nozaki… - … and devices XI, 2016 - spiedigitallibrary.org
We propose optical-loss suppressed thick-optical-waveguide (TOW) InGaN laser diodes
(LDs) without operatingvoltage increase. A record high continuous-wave (CW) output of 7.2 …
(LDs) without operatingvoltage increase. A record high continuous-wave (CW) output of 7.2 …
Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes
J Piprek - Applied Physics Letters, 2016 - pubs.aip.org
Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the
future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug …
future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug …
Continuous-wave operation of (Al, In) GaN distributed-feedback laser diodes with high-order notched gratings
We report on the continuous-wave, room-temperature operation of a distributed-feedback
laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and …
laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and …