Silicon millimeter-wave, terahertz, and high-speed fiber-optic device and benchmark circuit scaling through the 2030 ITRS horizon
SP Voinigescu, S Shopov, J Bateman… - Proceedings of the …, 2017 - ieeexplore.ieee.org
This paper reviews the technology requirements of future 100-300-GHz millimeter-wave
(mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as …
(mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as …
[图书][B] The Electrical Engineering Handbook-Six Volume Set
RC Dorf - 2018 - api.taylorfrancis.com
In two editions spanning more than a decade, The Electrical Engineering Handbook stands
as the definitive reference to the multidisciplinary field of electrical engineering. Our …
as the definitive reference to the multidisciplinary field of electrical engineering. Our …
First demonstration of distributed amplifier MMICs with more than 300-GHz bandwidth
This article reports on the first demonstration of distributed amplifier monolithic microwave
integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three …
integrated circuits (MMICs) with a bandwidth (BW) of more than 300 GHz. The three …
A 0.6-22-GHz broadband CMOS distributed amplifier
RC Liu, KL Deng, H Wang - IEEE Radio Frequency Integrated …, 2003 - ieeexplore.ieee.org
A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper.
Cascode gain cells and m-derived matching sections are used to enhance the gain and …
Cascode gain cells and m-derived matching sections are used to enhance the gain and …
170 GHz SiGe-BiCMOS loss-compensated distributed amplifier
This paper presents a travelling-wave amplifier (TWA) for wideband applications
implemented in a 0.13 μm SiGe BiCMOS technology (ft= 300 GHz, fmax= 500 GHz). The …
implemented in a 0.13 μm SiGe BiCMOS technology (ft= 300 GHz, fmax= 500 GHz). The …
InP DHBT distributed amplifiers with up to 235-GHz bandwidth
K Eriksson, I Darwazeh, H Zirath - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been
designed and measured. The amplifiers use different types of distributed amplifier (DA) …
designed and measured. The amplifiers use different types of distributed amplifier (DA) …
The (R) evolution of distributed amplifiers: From vacuum tubes to modern CMOS and GaN ICs
G Nikandish, RB Staszewski… - IEEE Microwave …, 2018 - ieeexplore.ieee.org
Broadband amplification of signals is desirable in many applications such as high-speed
data communications, high-resolution imaging systems, optoelectronics, and …
data communications, high-resolution imaging systems, optoelectronics, and …
A wideband gain-enhancement technique for distributed amplifiers
NLK Nguyen, NS Killeen, DP Nguyen… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
In this article, a new bandpass distributed amplifier (DA) using a wideband gain-boosting
technique is presented. In particular, a feedback network, including a series inductor and a …
technique is presented. In particular, a feedback network, including a series inductor and a …
Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems
A distributed amplifier with new cascade inductively coupled common-source gain-cell
configuration is presented. Compared with other existing gain-cell configurations, the …
configuration is presented. Compared with other existing gain-cell configurations, the …
60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz
F Ellinger - IEEE Journal of Solid-State Circuits, 2005 - ieeexplore.ieee.org
In this paper, the design and the results of a CMOS traveling-wave amplifier (TWA)
optimized for minimum noise figure is presented. Design tradeoffs and optimization …
optimized for minimum noise figure is presented. Design tradeoffs and optimization …