[HTML][HTML] Status and prospects of plasma-assisted atomic layer deposition
Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …
devices for computing and data storage, but also for emerging technologies such as related …
Engineering block copolymer materials for patterning ultra-low dimensions
C Cummins, G Pino, D Mantione… - Molecular Systems Design …, 2020 - pubs.rsc.org
The landscape of block copolymer (BCP) lithographic patterning has evolved significantly
from the early days of the first generation BCP material, poly (styrene)-block-poly (methyl …
from the early days of the first generation BCP material, poly (styrene)-block-poly (methyl …
Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications
Multiple patterning integrations for sub 193nm lithographic resolution are becoming
increasingly creative in pursuit of cost reduction and achieving desired critical dimension …
increasingly creative in pursuit of cost reduction and achieving desired critical dimension …
EPE improvement thru self-alignment via multi-color material integration
As the industry marches on onto the 5nm node and beyond, scaling has slowed down, with
all major IDMs & foundries predicting a 3-4 year cadence for scaling. A major reason for this …
all major IDMs & foundries predicting a 3-4 year cadence for scaling. A major reason for this …
SNC SADP Spacer etch process development using carbon hard mask mandrel for sub advanced process DRAM
H Liu, J Zhang, Z Zhao, LT Xu, C Chen… - 2022 China …, 2022 - ieeexplore.ieee.org
Self-aligned double patterning (SADP) process has become the standard patterning
technology for extending the half-pitch resolution beyond current ArF lithography tool's limit …
technology for extending the half-pitch resolution beyond current ArF lithography tool's limit …
EUV single exposure via patterning at aggressive pitch
As the semiconductor industry continues pushing Moore's law to the next node, interconnect
structures scaling will be a key element to performance improvement of functional devices …
structures scaling will be a key element to performance improvement of functional devices …
SADP etch process development using PR core for sub 17nm DRAM
LT Xu, S Zhang, LF Li, H Liu, XW Huang… - 2022 China …, 2022 - ieeexplore.ieee.org
Self-aligned double patterning (SADP) process has become the standard patterning
technology for extending the half-pitch resolution beyond current ArF lithography tool's limit …
technology for extending the half-pitch resolution beyond current ArF lithography tool's limit …
Roughness and uniformity improvements on self-aligned quadruple patterning technique for 10nm node and beyond by wafer stress engineering
Dimension shrinkage has been a major driving force in the development of integrated circuit
processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) …
processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) …
LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)
Critical back end of line (BEOL) Mx patterning at 7nm technology node and beyond requires
sub-36nm pitch line/space pattern in order to meet the scaling requirements. This small pitch …
sub-36nm pitch line/space pattern in order to meet the scaling requirements. This small pitch …
A holistic study on metal pitch uniformity control in the scheme of self-aligned double patterning
Z Liu - … Conference on Extreme Ultraviolet Lithography 2023, 2023 - spiedigitallibrary.org
The chip size progressive shrinkage imposes more stringent requirement on the fine
geometry processing with the technology revolution in the semiconductor industry. Until EUV …
geometry processing with the technology revolution in the semiconductor industry. Until EUV …