Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

Application of Native Inhomogeneities to Increase Compactness of Vertical Field-Effect
Transistors Page 1 IP: 5.10.31.210 On: Fri, 07 Jun 2024 19:33:18 Copyright: American Scientific …

Currently, the main drawback of ceramic scaffolds used in hard tissue regeneration is their
low mechanical strength. Stabilized zirconia, especially the tetragonal 3% yttrium-stabilized …

The fabrication process of ceramic yttria-stabilized zirconia (YSZ) and nickel oxide
nanofibers by electrospinning is reported. The preparation of hollow YSZ nanofibers and …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been
annealed at temperatures up to 1950 C for 10 min duration using inductive heating, or at …

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during
metalorganic chemical vapor deposition through sequential short-duration gyrotron …

This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped
silicon carbide (4H-SiC) layer. Specifically, high-concentration (1× 1020 at/cm3) Al …

SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich method. This
involves microwave heating-assisted physical vapor transport from a “source” 4H-SiC wafer …