Recent progress in solution‐based metal oxide resistive switching devices
Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
requirements of the Internet of Things, which demands ultra‐low power and high‐density …
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
Essential characteristics of memristors for neuromorphic computing
W Chen, L Song, S Wang, Z Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …
applied voltage or current. Memristive devices are thus capable of storing and computing …
PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Resistance random access memories (RRAM) or memristors with an analog change of
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
conductance are widely explored as an artificial synapse, eg, Pr 0.7 Ca 0.3 MnO 3 (PCMO) …
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
N Panwar, B Rajendran… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
In the literature, various pulse-based programming schemes have been used to mimic
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
typical spike time-dependent plasticity (STDP)-based learning rule observed in biological …
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
Resistance random access memories (RRAMs) are widely explored to show spike time
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
dependent plasticity (STDP) as a learning rule to show biological synaptic behavior, as …
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
HT Tseng, TH Hsu, MH Tsai, CY Huang… - Journal of Alloys and …, 2022 - Elsevier
Abstract Amorphous La 2 Zr 2 O 7 thin films were fabricated using the sol-gel method and
the bipolar resistive switching behavior of the metal (Al or Ti)/LZO/ITO devices were …
the bipolar resistive switching behavior of the metal (Al or Ti)/LZO/ITO devices were …
MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
Abstract A Ti2AlN MAX phase layered thin film electrode and oxygen getter layer for HfO2‐
based two‐terminal memristors is presented. The Ti2AlN/HfOx/Ti memristor devices exhibit …
based two‐terminal memristors is presented. The Ti2AlN/HfOx/Ti memristor devices exhibit …
Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM
Enhancement of nonlinearity (NL) in low-resistance state (LRS) currents of resistance
random access memory (RRAM) devices is a key challenge for the selectorless RRAM …
random access memory (RRAM) devices is a key challenge for the selectorless RRAM …