[HTML][HTML] 光学相控阵技术研究进展与发展趋势
田博宇， 彭英楠， 胡奇琪， 段佳， 骆永全… - High Power Laser …, 2023 - opticsjournal.net
摘要光学相控阵技术具有响应速度快, 系统紧凑, 功能多样和控制灵活等优点,
在众多科学技术领域得到了广泛的应用. 在近50 年来的光学相控阵研究与应用中 …
在众多科学技术领域得到了广泛的应用. 在近50 年来的光学相控阵研究与应用中 …
The effect of the carrier drift velocity saturation in high-power semiconductor lasers at ultrahigh drive currents
OS Soboleva, VV Zolotarev, VS Golovin… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Experimental light-current characteristics of high-power semiconductor lasers operating at
ultrahigh drive currents have been studied in terms of numerical models taking into account …
ultrahigh drive currents have been studied in terms of numerical models taking into account …
Wavelength‐stabilized high‐pulse‐power laser diodes for automotive LiDAR
For automotive light detection and ranging (LiDAR) systems diode lasers emitting short
optical pulses with a good beam quality and a low wavelength shift over a wide operating …
optical pulses with a good beam quality and a low wavelength shift over a wide operating …
Impact of carrier nonpinning effect on thermal power saturation in GaAs-based high power diode lasers
T Kaul, G Erbert, A Klehr, A Maaßdorf… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
A root-cause analysis of thermal power saturation in broad area diode lasers is presented.
Thermal power saturation limits in largest parts the optical power in continuous wave (CW) …
Thermal power saturation limits in largest parts the optical power in continuous wave (CW) …
Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers
P Crump, S Böldicke, CM Schultz… - Semiconductor …, 2012 - iopscience.iop.org
For maximum fibre-coupled power, high power broad area diode lasers must operate with
small lateral far field angles at high continuous wave (CW) powers. However, these …
small lateral far field angles at high continuous wave (CW) powers. However, these …
On the reliability of pulse power saturation models for broad-area GaAs-based lasers
J Piprek - Optical and Quantum Electronics, 2019 - Springer
With short current pulses, GaAs-based lasers can achieve high output powers if self-heating
and catastrophic optical damage are suppressed. However, the pulse power is still severely …
and catastrophic optical damage are suppressed. However, the pulse power is still severely …
What causes the pulse power saturation of GaAs-based broad-area lasers?
J Piprek, ZM Li - IEEE Photonics Technology Letters, 2018 - ieeexplore.ieee.org
With short current pulses, the output power of semiconductor lasers is limited by non-thermal
internal loss mechanisms. Two-photon absorption (TPA) was recently proposed as …
internal loss mechanisms. Two-photon absorption (TPA) was recently proposed as …
Combination of low-index quantum barrier and super large optical cavity designs for ultranarrow vertical far-fields from high-power broad-area lasers
When active regions that use low refractive index quantum barriers (LIQB) are combined
with super large optical cavity (SLOC) designs in GaAs-based diode lasers, high-power …
with super large optical cavity (SLOC) designs in GaAs-based diode lasers, high-power …
Near-Field Dynamics of Ultra-Wide-Aperture (800 μm) Diode Lasers Under Nanosecond Pulse Excitation
SO Slipchenko, AA Podoskin… - IEEE Photonics …, 2020 - ieeexplore.ieee.org
We present a study of near-field dynamics of ultrawide-aperture (800 μm) high-power diode
lasers pumped by nanosecond current pulses. The studied lasers are based on …
lasers pumped by nanosecond current pulses. The studied lasers are based on …
Tunnel-coupled laser diode microarray as a kW-level 100-ns pulsed optical power source (λ= 910 nm)
SO Slipchenko, AA Podoskin… - IEEE Photonics …, 2021 - ieeexplore.ieee.org
Pulsed 910nm laser sources based on tunnel-coupled AlGaAs/InGaAs/GaAs
heterostructures have been developed and studied. To provide the maximum brightness …
heterostructures have been developed and studied. To provide the maximum brightness …