In this study, an ab initio molecular dynamics method is employed to compare the responses
of SiC, TiC and ZrC to low energy irradiation. It reveals that C displacements are dominant in …

ZrC and TiC have been proposed to be alternatives to SiC as fuel-cladding and structural
materials in nuclear reactors due to their strong radiation tolerance and high thermal …

Silicon carbide is an important structural and electronic ceramic material that finds many
uses in a wide variety of applications that require stability at extreme conditions. In this study …

We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at≈ 1440° C,
began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the …

In this study, the low energy radiation responses of AlAs, GaAs and GaAs/AlAs superlattice
are simulated and the radiation damage effects on their electronic structures are …

First-principles calculations are used to investigate the effects of stacking faults (SFs) on
helium trapping and diffusion in cubic silicon carbon (3C-SiC). Both extrinsic and intrinsic …

The influence of the microstructure on the corrosion rate of three monolithic SiC samples in
FLiNaK salt at 900° C for 250 h was studied. The SiC samples, labeled as SiC-1, SiC-2, and …

The threshold displacement energy (Ed), associated defect configurations, and underlying
mechanisms for defect generation in low-energy displacement events of Sb2Se3 are …

Using first-principles calculations, based on the density functional theory, we have
investigated the mechanical and electronic properties of hydrogen-passivated 3C-, 2H-, 4H …

Using first‐principles and analytical potential atomistic simulations, production of defects in
epitaxial graphene (EG) on SiC upon ion irradiation for ion types and energies accessible in …