In this article, a Heterogeneous Gate-Dielectric Nanosheet Tunnel Field Effect Transistor
(HD-NSH-TFET) with three channels is investigated using the 3-D Visual TCAD simulator …

This work proposes an optimized Nanosheet Transistor (NSHT) with an inner high-k spacer
and an underlap region. A symmetric dual-k spacer structure and an undoped underlap …

The reliability of Silicon-based nanosheet transistors (NSTs) is limited by process-induced
variations (PIVs) like work-function-variations (WFV), line-edge-roughness (LER), gate-edge …

This paper investigates the influence of geometrical variations on the performance
characteristics of a novel circular sheet junctionless double gate vertical nanotube (CSJL …

The art of creating nanoscale semiconductor devices has been one of the most advanced
technologies for almost half a century. Metal–oxide–semiconductor field‐effect transistor …

This work estimates the possible changes in analog performance due to on-chip power
supply variations for a 5 nm node N-channel Nanosheet Transistor. A fully calibrated …

This paper investigates structural optimization techniques using the high-k spacer and inter-
bridge Silicon (Si)-channels for superior delay performance in Silicon-based nanosheet …

This paper presents optimization of drain/source extension length of 5ánm node Nano-sheet
Transistor (NSHT) using a fully-calibrated TCAD platform. A 12ánm extension length shows …

A nanosheet junctionless FET (NS-JLFET) has been proposed in this article. The
applicability of the proposed device is explored for digital or switching results in this paper …

the scaling technique is used for improving the performance of semiconductor devices.
MOSFET, SOI, and FinFET have reached their limits at the 5nm technology node and are …