This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies
including spin-transfer-torque magnetic random access memory (STTMRAM), phase …

Since 3D NAND was introduced to the industry with 24 layers, the areal density has been
successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers …

Since the introduction of a 3-D NAND product in 2014, the areal density has increased by
more than 8 times (from 0.96 to 7.80 Gb/mm 2) in the recent five years. The increase of word …

This paper reviews the recent historical trends of the NAND Flash technology, highlighting
the evolution of its main parameters and explaining what allowed it to become not only the …

A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly
examining the challenges that occur to a stack, several technologies are suggested to …

Compared to planar (ie, two-dimensional) NAND flash memory, 3D NAND flash memory
uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip …

A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented.
Several vertical scale-down effects such as deteriorated WL loading and variations are …

A planar floating-gate NAND technology has previously realized a 0.87 Gb/mm2 memory
density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the …

RRAM technology has made significant progress in the past decade as a competitive
candidate for the next generation non-volatile memory (NVM). This lecture is a …

Since the first demonstration of a production quality three-dimensional (3D) stacked-word-
line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density …