Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates
Structural, morphological, and band offset properties of GaAs/Ge/GaAs heterostructures
grown in situ on (100),(110), and (111) A GaAs substrates using two separate molecular …
grown in situ on (100),(110), and (111) A GaAs substrates using two separate molecular …
Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
Y Yang, K Lu Low, W Wang, P Guo, L Wang… - Journal of Applied …, 2013 - pubs.aip.org
We investigate germanium-tin alloy (Ge 1− x Sn x) as a material for the design of tunneling
field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge 1− x …
field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge 1− x …
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100),(110), and (111) A GaAs substrates by molecular beam epitaxy
Structural and band alignment properties of atomic layer Al 2 O 3 oxide film deposited on
crystallographically oriented epitaxial Ge grown in-situ on (100),(110), and (111) A GaAs …
crystallographically oriented epitaxial Ge grown in-situ on (100),(110), and (111) A GaAs …
Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to
enhance the device performance of tunneling field-effect transistor (TFET). In this work, the …
enhance the device performance of tunneling field-effect transistor (TFET). In this work, the …
Study on analog/RF and linearity performance of staggered heterojunction gate stack tunnel FET
Staggered heterostructure gate stack TFET is proposed. The analog, RF, and linearity
performance of the device were studied in an ATLAS TCAD device simulator. The high K …
performance of the device were studied in an ATLAS TCAD device simulator. The high K …
Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction
K Xi, J Bi, J Chu, G Xu, B Li, H Wang, M Liu, M Sandip - Applied Physics A, 2020 - Springer
N-type tunnel field effect transistors (TFETs) with Si 1− x Ge x/Si hetero-junction in the ultra-
shallow N+ pocket region have been fabricated. This paper investigates the total ionization …
shallow N+ pocket region have been fabricated. This paper investigates the total ionization …
Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium
We have investigated the structural and band alignment properties of nanoscale titanium
dioxide (TiO 2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on …
dioxide (TiO 2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on …
Energy band alignment of atomic layer deposited HfO2 on epitaxial (110) Ge grown by molecular beam epitaxy
The band alignment properties of atomic layer HfO 2 film deposited on epitaxial (110) Ge,
grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy …
grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy …
BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices
Ferroelectric–germanium heterostructures have a strong potential for multifunctional
devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while …
devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while …
Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110) Ge
Growth, structural, and band alignment properties of pulsed laser deposited amorphous
BaTiO 3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their …
BaTiO 3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their …