From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Over the past few decades, the diversified development of antiferromagnetic spintronics has
made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the …

The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …

All-electrical driven magnetization switching attracts much attention in next-generation
spintronic memory and logic devices, particularly in magnetic random-access memory …

Recently, experimental results have demonstrated that perpendicular magnetic tunnel
junction (p-MTJ) with the antiferromagnetic (AFM)/ferromagnetic (FM)/oxide structure can …

Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field (⁠ HEX⁠), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …

The development of new functional memories using emerging nonvolatile devices has been
widely investigated. Spin-transfer torque magnetoresistive random access memory (STT …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

Spintronic devices are regarded as a promising solution for future computing and memory
technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS …

In traditional von Neumann computing architectures, the essential transfer of data between
the processor and memory hierarchies limits the computational efficiency of next-generation …