Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the
past three years. The results have been very promising considering the relative immaturity …

The incredible growth of the Internet and data transmission are pushing the bandwidth
requirements for fiber networks and expansion of metro and local area networks at an …

We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double
quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD) …

We have realized high-quality GaInAs-GaAs quantum wells (QWs) with high strain of over
2% on GaAs (311) B substrate for a polarization controlled vertical-cavity surface-emitting …

(57) ABSTRACT A vertical-cavity, Surface-emission-type laser diode includes an optical
cavity formed of an active region Sandwiched by upper and lower reflectors, wherein the …

The properties of 1.2-μm highly strained InGaAs quantum wells (QWs) grown on GaAs
substrates have been analyzed. Optical gain spectra versus injection current and …

GaAs-based dilute nitride lasers are potential light sources for future optical fiber
communication systems at the wavelength of 1.3/spl mu/m. In this paper we discuss the …

We have studied the photoluminescence properties of as-grown GaAs 1− x N x epitaxial
layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission …

We have grown 1.3 µm GaInAsN/GaAs single-quantum-well (SQW) laser structures by solid
source molecular beam epitaxy using an RF plasma source for the generation of active …

Recent manifestations of apparently faster-than-light effects confirmed our predictions that
the group velocity in transparent optical media can exceed c. Special relativity is not violated …