Emerging SiC applications beyond power electronic devices

F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck… - Micromachines, 2023 - mdpi.com
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

Molecular insight of the interface evolution of silicon carbide under hyperthermal atomic oxygen impact

Z Cui, J Zhao, G Yao, Z Li, D Wen - Physics of Fluids, 2022 - pubs.aip.org
One of the key challenges faced by hypersonic flying is the complex thermal–mechanical–
chemical coupling effect between thermal protection materials and non-equilibrium flow …

Advanced approach of bulk (111) 3C-SiC epitaxial growth

C Calabretta, V Scuderi, C Bongiorno… - Microelectronic …, 2024 - Elsevier
Abstract 3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and
experience wafer cracks and bowing preventing access to bulk growth. This work reports …

Nanoscale mapping of residual stresses in Al 2024 alloys using correlative and multimodal scanning transmission electron microscopy

ME Daoud, I Taha, M Helal, H Kamoutsi… - Heliyon, 2024 - cell.com
A methodology for the mapping of residual stresses in metal alloys has been developed by
analyzing an isotropic and homogeneous Al2024 alloy with scanning transmission electron …

A simple method for the measurement of Young's moduli of bilayer thin films based on the electrostatic drive approach

H Liu, Z Zhang, H Gao, L Zhang, L Wang - Micromachines, 2022 - mdpi.com
This paper presents a simple method for the in situ determination of Young's moduli of
surface-micromachined bilayer thin films. The test structure consists of a cantilever, a bottom …

Ion irradiation induced blister formation and exfoliation in 3C-SiC

N Sreelakshmi, S Sen, K Ganesan, S Amirthapandian - Applied Physics A, 2024 - Springer
Investigation of surface blistering and exfoliation in silicon carbide (SiC) by H+ ion irradiation
can be utilized for the smart cut or ion cut process, which will overcome the major challenges …

3C-SiC/Si heterostructure for self-powered multiband (UV-VIS) photodetection applications

IM Tamay, K Teker - Physica Scripta, 2022 - iopscience.iop.org
This study reports a self-powered 3C-SiC/Si heterostructure photodetector in both metal-
semiconductor-metal (MSM) and heterojunction (HET) configurations and capable of …

Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000

S Sapienza, L Belsito, M Ferri, I Elmi, M Zielinski… - Proceedings, 2024 - mdpi.com
In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double-clamped
beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is …

Assessing innovative bulk (111) 3C-SiC epitaxial growth

C Calabretta, V Scuderi, C Bongiorno… - … and Multi-Physics …, 2024 - ieeexplore.ieee.org
This study addresses the poor crystal quality and wafer cracks experienced by 3C-SiC films
grown on (111) Si substrates, which prevent access to bulk growth. By employing a novel …

Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on Insulator

F La Via, L Belsito, M Ferri, S Sapienza… - Materials Science …, 2022 - Trans Tech Publ
In this work, we investigate, by μ-Raman spectroscopy the distribution of stress field on a
micro-machined structures. They were realized on a 3C-SiC substrate, grown on a Silicon …