Systematic design of hybrid high power microwave amplifiers using large gate periphery GaN HEMTs
M Forouzanfar, M Joodaki - AEU-International Journal of Electronics and …, 2018 - Elsevier
In this paper, a design methodology for realization of hybrid microwave power amplifiers
(PAs) using discrete GaN HEMTs is systematically explained. High power solid-state …
(PAs) using discrete GaN HEMTs is systematically explained. High power solid-state …
Realization of a broadband hybrid X-band power amplifier based on fT-doubler technique
This paper presents the design steps for the fabrication of a hybrid microwave power
amplifier (PA) based on f T-doubler technique. The PA is implemented using two 6 W …
amplifier (PA) based on f T-doubler technique. The PA is implemented using two 6 W …
Design of X-band SSPA based on GaN HEMT for telemetry subsystem of near-earth space missions
P Aliparast, MT Noghani, A Farhadi… - AEU-International Journal …, 2021 - Elsevier
In this paper, the design, and implementation of an X-band, 10 W, Solid-State Power
Amplifier (SSPA) based on Hybrid Microwave Integrated Circuit (HMIC) technology using …
Amplifier (SSPA) based on Hybrid Microwave Integrated Circuit (HMIC) technology using …
Odd-Mode Instability Analysis of fT-Doubler Hybrid Power Amplifiers Based on GaN-HEMT
This brief is aimed to investigate and resolve the odd-mode instability of a hybrid high-
frequency power amplifier (PA) based on the f T-doubler technique. A description of odd …
frequency power amplifier (PA) based on the f T-doubler technique. A description of odd …
A distributed power amplifier design with a high power gain
In this paper we present a distributed power amplifier that has a good gain-bandwidth
product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 …
product in comparison with other recent discrete distributed power amplifiers. A TGF2023-01 …
[PDF][PDF] Design and Simulation of Wideband High-Efficiency X-band MMIC Power Amplifier based on GaN HEMT Technology
M Forouzanfar, A Bijari - Majlesi Journal of Telecommunication …, 2022 - journals.iau.ir
High output power, good efficiency, sufficient power gain, compact size, and low cost are
essential parameters of highfrequency integrated microwave power amplifiers. Due to its …
essential parameters of highfrequency integrated microwave power amplifiers. Due to its …
[PDF][PDF] Simulation and Fabrication of 3.5 W X-band Power Amplifier using Discrete GaN HEMT Transistors
M Forouzanfar - Majlesi Journal of Telecommunication Devices, 2021 - journals.iau.ir
This paper presents different steps of simulation and fabrication of a power amplifier, which
was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz …
was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz …