Silicon spintronics

R Jansen - Nature materials, 2012 - nature.com
Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming
to create a revolutionary and energy-efficient information technology in which digital data …

Silicon spintronics with ferromagnetic tunnel devices

R Jansen, SP Dash, S Sharma… - … Science and Technology, 2012 - iopscience.iop.org
In silicon spintronics, the unique qualities of ferromagnetic materials are combined with
those of silicon, aiming at creating an alternative, energy-efficient information technology in …

Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions

Y Song, H Dery - Physical Review Letters, 2014 - APS
We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-
insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin …

Analysis of phonon-induced spin relaxation processes in silicon

Y Song, H Dery - Physical Review B—Condensed Matter and Materials …, 2012 - APS
We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …

Gate-Controlled Spin Injection at Interfaces

N Reyren, M Bibes, E Lesne, JM George, C Deranlot… - Physical Review Letters, 2012 - APS
We report results of electrical spin injection at the high-mobility quasi-two-dimensional
electron system (2-DES) that forms at the LaAlO 3/SrTiO 3 interface. In a nonlocal, three …

Silicon spintronics: Progress and challenges

V Sverdlov, S Selberherr - Physics Reports, 2015 - Elsevier
Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

Spin Transport and Relaxation up to 250 K in Heavily Doped -Type Ge Detected Using Electrodes

Y Fujita, M Yamada, M Tsukahara, T Oka, S Yamada… - Physical Review …, 2017 - APS
To achieve spin transport in heavily doped n-type Ge (n+-type Ge) in the high-temperature
range (T≥ 130 K), we examine the growth of highly spin-polarized Co 2 FeAl 0.5 Si 0.5 …

Crossover from Spin Accumulation into Interface States to Spin Injection<? format?> in the Germanium Conduction Band

A Jain, JC Rojas-Sanchez, M Cubukcu, J Peiro… - Physical review …, 2012 - APS
Electrical spin injection into semiconductors paves the way for exploring new phenomena in
the area of spin physics and new generations of spintronic devices. However the exact role …

Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements

M Yamada, M Tsukahara, Y Fujita, T Naito… - Applied Physics …, 2017 - iopscience.iop.org
We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …