Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure
X Zhao, K Sun, S Cui, B Tang, H Hu… - Advanced Photonics …, 2023 - Wiley Online Library
Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
Enhanced optoelectronic performance of yellow light-emitting diodes grown on InGaN/GaN pre-well structure
X Zhao, Z Wan, L Gong, G Tao, S Zhou - Nanomaterials, 2021 - mdpi.com
InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components
for the next-generation solid-state lighting industry. In this work, we introduce additional …
for the next-generation solid-state lighting industry. In this work, we introduce additional …
Tuning the structural, electronic and dynamical properties of Janus M 4 X 3 Y 3 (M= Pd, Ni and Co; X, Y= S, Se and Te) monolayers: a DFT study
Based on density functional theory, the structural, electronic and vibrational properties of two-
dimensional transition metal chalcogenides M2X3 and their Janus type M4X3Y3, where M …
dimensional transition metal chalcogenides M2X3 and their Janus type M4X3Y3, where M …
Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via …
G Tan, A Shuhaimi, R Norhaniza, N Zahir, YJ Low… - Photonics, 2022 - mdpi.com
Research on enhancement green light emitter is important to obtain a perfect red-green-blue
(RGB) induced white light source. Unfortunately the present of mixed phase in deposition of …
(RGB) induced white light source. Unfortunately the present of mixed phase in deposition of …
Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode
YW Mu, HL Dong, ZG Jia, W Jia, J Liang… - ECS Journal of Solid …, 2024 - iopscience.iop.org
Abstract An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum
barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN …
barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN …
The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si (001) Substrate, According to Transmission Electron …
DA Kirilenko, AV Myasoedov, AE Kalmykov… - Technical Physics …, 2023 - Springer
Structural features of the interface between a semipolar gallium nitride layer and buffer layer
of aluminum nitride grown on a SiC/Si (001) template misoriented by an angle of 7° were …
of aluminum nitride grown on a SiC/Si (001) template misoriented by an angle of 7° were …
[PDF][PDF] Влияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si (001), по данным …
ДА Кириленко, АВ Мясоедов, АЕ Калмыков… - Письма в …, 2022 - scholar.archive.org
Методом просвечивающей электронной микроскопии высокого разрешения проведено
исследование структурных особенностей интерфейса между полуполярным слоем …
исследование структурных особенностей интерфейса между полуполярным слоем …
[PDF][PDF] Luminescence and crystalline properties of InGaN-based LED on Si substrate with AlN/GaN superlattice structure
EA Alias, MIM Taib, ASA Bakar, T Egawa… - Journal of Physical …, 2021 - core.ac.uk
A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on
silicon (Si) substrate was successfully demonstrated by introducing aluminium …
silicon (Si) substrate was successfully demonstrated by introducing aluminium …
Nanostructured III-nitride light emitting diodes
N Amador-Méndez - 2022 - theses.hal.science
Flexible light emitting diodes (LEDs) are today a topic of intense research driven by
applications such as bendable displays, conformable light sources, bio-medical devices, etc …
applications such as bendable displays, conformable light sources, bio-medical devices, etc …