X Zhao, Z Wan, L Gong, G Tao, S Zhou - Nanomaterials, 2021 - mdpi.com
InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components for the next-generation solid-state lighting industry. In this work, we introduce additional …
I Eren, B Akgenc - Physical Chemistry Chemical Physics, 2021 - pubs.rsc.org
Based on density functional theory, the structural, electronic and vibrational properties of two- dimensional transition metal chalcogenides M2X3 and their Janus type M4X3Y3, where M …
G Tan, A Shuhaimi, R Norhaniza, N Zahir, YJ Low… - Photonics, 2022 - mdpi.com
Research on enhancement green light emitter is important to obtain a perfect red-green-blue (RGB) induced white light source. Unfortunately the present of mixed phase in deposition of …
YW Mu, HL Dong, ZG Jia, W Jia, J Liang… - ECS Journal of Solid …, 2024 - iopscience.iop.org
Abstract An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN …
DA Kirilenko, AV Myasoedov, AE Kalmykov… - Technical Physics …, 2023 - Springer
Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si (001) template misoriented by an angle of 7° were …
ДА Кириленко, АВ Мясоедов, АЕ Калмыков… - Письма в …, 2022 - scholar.archive.org
Методом просвечивающей электронной микроскопии высокого разрешения проведено исследование структурных особенностей интерфейса между полуполярным слоем …
EA Alias, MIM Taib, ASA Bakar, T Egawa… - Journal of Physical …, 2021 - core.ac.uk
A crack-free indium gallium nitride (InGaN) based light emitting diode (LED) grown on silicon (Si) substrate was successfully demonstrated by introducing aluminium …
Flexible light emitting diodes (LEDs) are today a topic of intense research driven by applications such as bendable displays, conformable light sources, bio-medical devices, etc …