The magnetization and magnetoresistance of Si whiskers doped with< Ni, B> to boron
concentrations corresponding to the metal-insulator transition (2× 10 18 cm− 3÷ 5× 10 18 …

Study the magnetic properties of Si< B, Ni> whiskers, the concentration of which
corresponds to a dielectric and metal side of metal-insulator transition, is performed …

Transverse magnetoresistance in p-type conductivity Si whiskers with different impurity
concentration that correspond to the dielectric side of metal-insulator transition were studied …

The study of the magnetoresistance in InSb whiskers with an impurity concentration in the
vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in …

Temperature dependencies of silicon whiskers' resistance doped with boron to
concentration of 5× 1018 cm− 3 and modifed nickel where measured in temperature range …

It was studied the electrical magnetoresistance of nickel-and boron-doped filamentary
silicon crystals in which a metal-insulator transition is observed. A giant magnetoresistance …

The spin-resolved electronic structure of doped crystals Si< Ni> and Si< B, Ni> has been
evaluated within the generalized gradient approximation (GGA) framework. The strong …

We study the three-dimensional antiferromagnetic Ising model in both uniform longitudinal
(H) and transverse (Ω) magnetic fields by using the effective-field theory (EFT) with finite …

The spin-resolved electronic structure of crystals Si< B, Fe>, Si< B, Co> and Si< B, Ni> was
evaluated with the hybrid functional PBE0. All the calculations have been done for …

The features of carrier transfer charge of silicon microcrystals doped with Boron up to
concentrations that conforms to metal-dielectric transition and Nickel impurity, localized in …