Group-III-nitride optical devices are conventionally important for displays and solid-state
lighting, and recently have garnered much interest in the field of visible-light communication …

Passively mode-locked semiconductor lasers are promising for a wide variety of chip-scale
high-speed and high-capacity applications. However, the phase noise/timing jitter of such …

Herein, the lasing threshold and gain characteristics of ultraviolet‐C optically pumped edge‐
emitting lasers with thick single‐quantum‐well (SQW) active regions are investigated by the …

Passive mode locking with a fundamental repetition rate at∼ 18.46 GHz is demonstrated in
a two-section InGaSb/AlGaAsSb quantum well laser emitting at 2 μm. Modal gain …

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is
an essential building block yet to be demonstrated for III-nitride photonic integrated circuits …

We present passive mode locking of a GaSb-based monolithic diode laser emitting at 2.2 μm
with a fundamental repetition rate around 9.57 GHz. A pulse width of∼ 2.4 ps is …

We develop a monolithic picosecond laser pulse generator, based on the classical design of
a group-III-nitride Fabry-Pérot laser diode with electrically separated ridge sections. We use …

Self-Q-switching in GaN-based multisection laser diodes (MS-LDs) is investigated. The
influence of the absorption on threshold currents and charge carrier lifetimes in the absorber …

Investigation of spectro‐temporal characteristics of short‐pulse generation from a violet–
blue AlGaInN multi‐section laser diode implemented in an external cavity is demonstrated …

We report superfluorescent (SF) emission in electrically pumped InGaN/InGaN QW lasers
with saturable absorber. In particular, we observe a superlinear growth of the peak power of …