Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Radiation effects in GaN materials and devices
This article reviews the effects of radiation damage on GaN materials and devices such as
light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma …
light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Review of radiation damage in GaN-based materials and devices
A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …
Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
The effects of ionizing radiation on β-Ga 2 O 3 metal-oxide-semiconductor field-effect
transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy (SiO …
transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy (SiO …
Gamma irradiation effect on performance of β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors for space applications
The radiation hardness of Ni/Ga 2 O 3/Ni metal-semiconductor-metal (MSM) solar blind
photodetectors has been investigated under the exposure of 60 Co γ-source. It was …
photodetectors has been investigated under the exposure of 60 Co γ-source. It was …
Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs
S Onoda, A Hasuike, Y Nabeshima… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
[图书][B] Reliability and radiation effects in compound semiconductors
AH Johnston - 2010 - books.google.com
This book focuses on reliability and radiation effects in compound semiconductors, which
have evolved rapidly during the last 15 years. It starts with first principles, and shows how …
have evolved rapidly during the last 15 years. It starts with first principles, and shows how …
Cumulative dose γ-irradiation effects on material properties of AlGaN/GaN hetero-structures and electrical properties of HEMT devices
C Sharma, AK Visvkarma, R Laishram… - Semiconductor …, 2019 - iopscience.iop.org
The effects of γ-ray irradiation on AlGaN/GaN epitaxial layers and on high electron mobility
transistor (HEMT) devices have been systematically investigated. The layer structure and …
transistor (HEMT) devices have been systematically investigated. The layer structure and …