III–V heterostructure tunnel field-effect transistor
The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
switches to overcome the power dissipation challenge in ultra-low power integrated circuits …
InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
InGaAs homojunction Tunnel FET devices are demonstrated with sub-60 mV/dec Sub-
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …
threshold Swing (SS) measured in DC. A 54 mV/dec SS is achieved at 100 pA/μm over a …
Optimization and scaling of Ge-pocket TFET
TFETs are promising candidates for future low-power logic applications because of their
potential for outperforming conventional MOSFETs under reduced supply voltage (VDD) …
potential for outperforming conventional MOSFETs under reduced supply voltage (VDD) …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Lateral InAs/Si p-type tunnel FETs integrated on Si—part 1: experimental devices
Tunnel FETs (TFETs) have been identified as the most promising steep slope devices for
ultralow power logic circuits. In this paper, we demonstrate in-plane InAs/Si TFETs …
ultralow power logic circuits. In this paper, we demonstrate in-plane InAs/Si TFETs …
Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET
We investigate the impact of gate-stack engineering using W/ZrO 2/Al 2 O 3 on the
performance of planar-type InGaAs tunneling field-effect transistors (TFETs). It is shown that …
performance of planar-type InGaAs tunneling field-effect transistors (TFETs). It is shown that …
Design and estimation of GaAsSb/InGaAs hetero-junction double-dual gate vertical tunnel FET (HJ-VTFET) biosensor
In this work, a novel Gallium Arsenide Antimonide (GaAsSb)/Indium Gallium Arsenide
(InGaAs) hetero-junction double-dual gate-gate stack Vertical Tunnel FET (HJ-VTFET) …
(InGaAs) hetero-junction double-dual gate-gate stack Vertical Tunnel FET (HJ-VTFET) …
Engineered nanomaterial in electronics and electrical industries
The explorations of the innovative properties of engineered nanomaterials specifically in
electronics and electrical applications are not new and yet are progressing, particularly in …
electronics and electrical applications are not new and yet are progressing, particularly in …
Experimental details of a steep-slope ferroelectric InGaAs tunnel-FET with high-quality PZT and modeling insights in the transient polarization
The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a
sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected …
sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected …
Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …