Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

The present report relates to a systematic study of dopant incorporation into bulk β-Ga 2 O 3
single crystals grown by the Czochralski method, and their impact on growth stability, crystal …

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga 2 O 3 single crystals
grown by the Czochralski method, as well as the impact of these dopants on optical …

The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …

Detailed investigations of the spectroscopic properties of Cr 3+ ions in β-Ga 2 O 3: 0.05% Cr
3+ single crystals grown by the floating zone technique have been performed in the …

The difficulty in fabricating p-type Ga2O3 is a crucial issue which restricts its applications in
practical devices. In the present work, we have performed first principles studies on …

The photoluminescence, excitation, and absorption spectra as well as the electrical
conductivity of β-Ga 2 O 3: Cr and β-Ga 2 O 3: Cr, Mg single crystals were studied. The as …

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-
Ga2O3 using both protons and helium ions, showing a strong enhancement of the Cr3+ …

Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga 2 O
3: Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga 2 O 3 …