Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN
While aluminum scandium nitride based ferroelectric materials have shown significant
promise for non-volatile memory applications, difficulties relating challenges in device …
promise for non-volatile memory applications, difficulties relating challenges in device …
Imitation of a Dual-Modal Synapse Based on a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction for Neuromorphic Computing
H Yang, M Duan, C Kang, G Yang… - ACS Applied …, 2024 - ACS Publications
Bioinspired artificial synapses have attracted considerable attention in the field of
neuromorphic computing. Hf0. 5Zr0. 5O2 thin films exhibit robust ferroelectricity even at a …
neuromorphic computing. Hf0. 5Zr0. 5O2 thin films exhibit robust ferroelectricity even at a …
[HTML][HTML] Engineering of ferroelectricity in thin films using lattice chemistry: A perspective
Ferroelectric materials hold significant potential for ultralow-energy-consuming oxide
electronics and have recently been pointed out as a suitable platform for next-generation …
electronics and have recently been pointed out as a suitable platform for next-generation …
Effect of ZnO Interfacial Seed Layer in Sol–Gel Grown ZnMgO Ferroelectric
High remanent polarization observed in ferroelectric ZnMgO shows promise for ferroelectric
memory devices made of low-cost, earth-abundant materials and is capable of a large …
memory devices made of low-cost, earth-abundant materials and is capable of a large …
Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0. 5Zr0. 5O2 ferroelectric thin films
X Wang, M Wu, T Zhang, B Cui, YC Li, J Liu… - Applied Physics …, 2024 - pubs.aip.org
The recent discovery of ferroelectric properties in HfO 2 has sparked significant interest in
the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling …
the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling …
Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf0.5Zr0.5O2 thin films
K Liu, K Liu, X Zhang, J Fang, F Jin, W Wu… - Chinese Physics …, 2024 - iopscience.iop.org
Doped HfO2-based ferroelectric (FE) films are emerging as leading contenders for the next
generation of FE non-volatile memory due to their excellent compatibility with …
generation of FE non-volatile memory due to their excellent compatibility with …