We present high-sensitivity photoreceivers based on a vertical-illumination-type 100% Ge-
on-Si pin photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A …

We present the enhanced performances of a vertical-illumination-type Ge-on-Si avalanche
photodetector based on internal RF-gain effects operating up to 50 Gb/s. A fabricated Ge-on …

This work presents a theoretical analysis of direct transition in strain balanced SiGeSn/GeSn
quantum well infrared photodetector. Eigen energies for Г valley conduction band, heavy …

A strong quantum-confined Stark effect (QCSE) from light hole related transitions at the Γ
point (LH1-cΓ1) in Ge/Si 0.15 Ge 0.85 multiple quantum wells is demonstrated from both …

A theoretical model is proposed to analyze the inter-valley electron transferring between
direct Γ and indirect L valleys, which sheds light on the electron conduction dynamics in (0 0 …

性能优越的Si 基高效发光材料与器件的制备一直是Si 基光电集成电路中最具挑战性的课题之一.
Si 基Ge 材料不仅与成熟的硅工艺相兼容, 而且具有准直接带特性, 被认为是实现Si …

There is presently increased interest in using germanium (Ge) for both electronic and optical
devices on top of silicon (Si) substrates to expand the functionality of Si technology. It has …

This work investigates vital characteristics of tin doped group IV based quantum well for its
potential as an electroabsorption modulator (EAM). Absorption coefficient and refractive …

Germanium material based on band gap engineering has aroused great interest for the
CMOS-compatible optoelectronic integrated circuits due to its quasi-direct band gap …

This first aim of this thesis is the development of high performance and low energy
modulators based on Ge/SiGe multiple quantum wells by exploiting the Quantum Confined …