The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …

Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still
uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two …

A compact analytical drain current model considering the inversion layer and source
depletion is developed for the gate-all-around (GAA) heterojunction tunneling FET (H-TFET) …

InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of
the In content of the 8 nm channel from 53% to 70% is found to significantly boost the …

The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (I
on) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to …

In this article, we present a compact analytical model for the drain current of the nanowire
heterojunction tunneling field-effect transistor (FET). The model is developed by leveraging …

The tunnel field-effect transistor (TFET) is a semiconductor device aimed at low-power logic
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo-and hetero-
junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling …

Tunnel-FETs (TFETs) promise a subthreshold swing (SS) smaller than 60mV/dec and are
considered as interesting candidates to replace MOSFET in future low-power technology …

Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs).
However, previous studies on homostructure TFETs have found an increase in ON-current to …