Surface alloying at InAs GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
JG Belk, CF McConville, JL Sudijono, TS Jones… - Surface science, 1997 - Elsevier
In situ scanning tunnelling microscopy and reflection high energy electron diffraction have
been used to study InAs GaAs interfaces grown on (001) surfaces by molecular beam …
been used to study InAs GaAs interfaces grown on (001) surfaces by molecular beam …
Polarization charge screening and indium surface segregation in (In, Ga) N/GaN single and multiple quantum wells
O Mayrock, HJ Wünsche, F Henneberger - Physical Review B, 2000 - APS
Energies and oscillator strengths of the optical transitions in (In, Ga) N/GaN quantum-well
structures with thin cap layers are investigated theoretically. Based on a self-consistent …
structures with thin cap layers are investigated theoretically. Based on a self-consistent …
Structures of a Ag monolayer deposited on Cu (111), Cu (100), and Cu (110) substrates: An extended tight-binding quenched-molecular-dynamics study
We determine the atomic structure of a Ag monolayer deposited on the three low-index faces
of a Cu substrate by means of an extended tight-binding quenched-molecular-dynamics …
of a Cu substrate by means of an extended tight-binding quenched-molecular-dynamics …
Quantification of segregation and mass transport in Stranski-Krastanow layers
We report on transmission electron microscopy (TEM) and photoluminescence (PL)
spectroscopy measurement of mass transport and segregation in InAs Stranski-Krastanow …
spectroscopy measurement of mass transport and segregation in InAs Stranski-Krastanow …
Sb-surface segregation and the control of compositional abruptness at the GaAsSbGaAs interface
Quantitative measurements of Sb surface segregation in pseudomorphic GaAs0. 8Sb0. 2
layers grown on GaAs (001) using molecular beam epitaxy (MBE) were performed in situ …
layers grown on GaAs (001) using molecular beam epitaxy (MBE) were performed in situ …
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures
E Tournié, KH Ploog - Thin Solid Films, 1993 - Elsevier
We review the newly emerging field of surfactant-mediated molecular beam epitaxy (SM-
MBE) and its applications to the growth of strained layer heterostructures (SLHs). We first …
MBE) and its applications to the growth of strained layer heterostructures (SLHs). We first …
Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
The growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate
temperatures (∼ 250° C) and high As overpressures, leading to the incorporation of excess …
temperatures (∼ 250° C) and high As overpressures, leading to the incorporation of excess …
Equilibrium shapes and energies of coherent strained InP islands
QKK Liu, N Moll, M Scheffler, E Pehlke - Physical Review B, 1999 - APS
The equilibrium shapes and energies of coherent strained InP islands grown on GaP have
been investigated with a hybrid approach that has been previously applied to InAs islands …
been investigated with a hybrid approach that has been previously applied to InAs islands …
Influence of indium segregation on the emission from InGaAs/GaAs quantum wells
H Yu, C Roberts, R Murray - Applied physics letters, 1995 - pubs.aip.org
Indium segregation in InxGa1xAs/GaAs (0.05x 0.25) quantum wells grown by molecular
beam epitaxy has been investigated using low temperature photoluminescence. Additional …
beam epitaxy has been investigated using low temperature photoluminescence. Additional …
Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer
We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …