Observation of single-defect memristor in an MoS2 atomic sheet
Non-volatile resistive switching, also known as memristor effect, where an electric field
switches the resistance states of a two-terminal device, has emerged as an important …
switches the resistance states of a two-terminal device, has emerged as an important …
Radiofrequency switches based on emerging resistive memory technologies-a survey
High-performance radio frequency (RF) switches play a critical role in allowing radio
transceivers to provide access to shared resources such as antennas. They are important …
transceivers to provide access to shared resources such as antennas. They are important …
A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon
Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal
oxides, colloquially known as memristors, and of broad interest for memory technology and …
oxides, colloquially known as memristors, and of broad interest for memory technology and …
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile
resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin …
resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin …
Localized Heating and Switching in MoTe2-Based Resistive Memory Devices
Two-dimensional (2D) materials have recently been incorporated into resistive memory
devices because of their atomically thin nature, but their switching mechanism is not yet well …
devices because of their atomically thin nature, but their switching mechanism is not yet well …
Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
Resistive-memory devices promise to revolutionize modern computer architecture
eliminating the data-shuttling bottleneck between the memory and processing unit. Recent …
eliminating the data-shuttling bottleneck between the memory and processing unit. Recent …
CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications
S López-Soriano… - Scientific Reports, 2022 - nature.com
Electrical resistance control programming of conductive bridging random access memory
(CBRAM) radio frequency (RF) switches could benefit the development of electronically …
(CBRAM) radio frequency (RF) switches could benefit the development of electronically …
All-atomristor logic gates
The atomristor (monolayer two-dimensional (2D)-material memristor) is competitive in high-
speed logic computing due to its binary feature, lower energy consumption, faster switch …
speed logic computing due to its binary feature, lower energy consumption, faster switch …
Non-volatile RF and mm-wave switches based on monolayer hBN
Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are
realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to …
realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to …
Understanding the resistive switching mechanism of 2-D RRAM: Monte Carlo modeling and a proposed application for reliability research
The 2-D materials have become promising candidates for resistive random access memory
(RRAM) devices as more unique resistive switching (RS) characteristics have recently been …
(RRAM) devices as more unique resistive switching (RS) characteristics have recently been …