Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Large Li-ion battery packs are an enabling technology for electric vehicles, smart homes and
the smart grid. Keeping the individual cells that make up the battery pack balanced reduces …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS,
which includes an image sensor with 64 active pixels and a total of 1263 transistors on a …

Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …

Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN
pn junction is formed on a low threading dislocation defect density (10 4-10 5 cm-2) GaN …

A simple structure with high breakdown voltage and a low leakage current of a vertical GaN
p–n diode on a GaN free-standing substrate is demonstrated. We describe a vertical p–n …