In this single work to cover the use of plasma as nanofabrication tool in sufficient depth
internationally renowned authors with much experience in this important method of …

Despite major advances in the fabrication and characterization of SiC and related materials,
there has been no convincing evidence of the synthesis of nanodevice-quality nanoislanded …

Self-assembled SiC quantum dots (QDs) are grown on Si substrates at a low substrate
temperature of 400 C by means of low-frequency, inductively coupled plasma assisted rf …

SiC nanostructures combine the physical properties of bulk SiC with that induced by the
reduction of their spatial dimensionality and thus can be considered as a new material …

Individual Si and C adatoms, as well as SiC clusters, on a Si surface are simulated by the
molecular dynamics method in the course of investigation of the initial stages of formation of …

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate Page 1
1063-7850/04/3008- $26.00 © 2004 MAIK “Nauka/Interperiodica” 0641 Technical Physics …

The process of the spatial ordering of SiC nanoclusters on the step edges on Si surfaces
was studied by means of multi-scale computer simulation. The evolution of cluster arrays on …

Co-deposition of Si and CH4 gas on a Si (111) surface at different temperatures is studied
by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) …

We report the assembly of carbon nanodots aligned on the sharp step edges of Si (111)-7×
7 reconstruction surface. The self-assembled and well-aligned pyramid-like carbon nanodot …

The main obstacle for the implementation of numerical simulation for the prediction of the
epitaxial growth is the variety of physical processes with considerable differences in time …