Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …

5,061,644 5,079,616 5,091,333 5,091,767 5,093,699 5,098,850 5,105,247 5,108,947
5,156,995 5,159,413 5,164.359 5,166,767 5,223,043 5,236,546 5,238,869 5,256,594 …

Visible‐color‐tunable light‐emitting diodes (LEDs) with electroluminescent color that
changes continuously from red to blue by adjusting the external electric bias are fabricated …

The p–n junction was invented in the first half of the twentieth century and the latter half saw
the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Hetero-epitaxial growth of GaN often leads to high density of threading dislocations, which
poses a significant challenge to the promotion of the performance of GaN-based devices. In …

We have demonstrated laser operation of an AlGaN multiple-quantum-well (MQW) laser
diode (LD) with a peak wavelength of 336.0 nm under pulsed current mode at room …

(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …

GaN-based light-emitting diodes (LEDs) with emitting wavelength of 450 nm were grown on
patterned sapphire substrates (PSSs) fabricated by chemical wet etching. The …