Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band
The intriguing surface sensitivity of the single‐crystalline semiconductor nanowires offers
tremendous opportunity in tuning the physical properties of nanophotonic and …
tremendous opportunity in tuning the physical properties of nanophotonic and …
Single GaP nanowire nonlinear characterization with the aid of an optical trap
Semiconductor nanowires exhibit numerous capabilities to advance the development of
future optoelectronic devices. Among the III–V material family, gallium phosphide (GaP) is …
future optoelectronic devices. Among the III–V material family, gallium phosphide (GaP) is …
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector
Understanding the metal/semiconductor interface is very significant for real-time
optoelectronic device applications. In particular, the presence of interface states and other …
optoelectronic device applications. In particular, the presence of interface states and other …
Growth of high-quality GaN nanowires on p-Si (1 1 1) and their performance in solid state heterojunction solar cells
We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
solid (VS) method using chemical vapor deposition (CVD). The effect of NH 3 gas flow rate …
Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods
Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well
nanorods (NRs), have been established as a promising material of choice for nanoscale …
nanorods (NRs), have been established as a promising material of choice for nanoscale …
Temperature-dependent carrier transport in GaN nanowire wrap-gate transistor
SPR Mallem, P Puneetha, Y Choi, SM Baek, SJ An… - Nanomaterials, 2023 - mdpi.com
For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier
transport mechanisms in nanowires. Here, we examine how temperature affects the …
transport mechanisms in nanowires. Here, we examine how temperature affects the …
Numerical study of detectivity for near-IR photodetectors based on InAsP NWs
In this work we report the results of numerical modeling of the InAs (P) nanowires (NWs)-
based photodetectors operating in near infrared (IR) spectral range. We compare …
based photodetectors operating in near infrared (IR) spectral range. We compare …
Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties
B Zhang, H Hu, X Yao, Y Wu, Y Shao, X Hao - CrystEngComm, 2023 - pubs.rsc.org
Heteroepitaxial growth of GaN will inevitably generate a large number of defects; serious
residual stress will be caused by the mismatch of the lattice and thermal expansion …
residual stress will be caused by the mismatch of the lattice and thermal expansion …
Quantum ATK analysis of silicon nanowire FET with a cylindrical metallic wrap-around gate varied with dielectrics
The nanowire FET is a game-changing technology because the gate is wrapped around the
channel, allowing for greater applications for gate controllability and switching. The usage of …
channel, allowing for greater applications for gate controllability and switching. The usage of …
[HTML][HTML] Численное моделирование режимов работы гетероструктурных фотодиодов на основе нитевидных нанокристаллов арсенида индия на кремниевых …
ЛН Дворецкая, АМ Можаров, АС Голтаев… - Научно-технические …, 2024 - cyberleninka.ru
В работе представлены результаты численного моделирования работы
гетероструктурных диодов на основе массива нитевидных нанокристаллов арсенида …
гетероструктурных диодов на основе массива нитевидных нанокристаллов арсенида …