Using the method of time-domain spectroscopy, we measure the far-infrared absorption and
dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica …

Using a high-performance optoelectronic THz beam system for time-domain spectroscopy,
we have measured the absorption and index of refraction of N-and P-type doped GaAs from …

The reflectance spectra of n‐type GaAs samples with carrier densities from 3× 1016 to 3×
1018 cm− 3 have been measured in the spectral range 55–1000 cm− 1. Except for slight …

A quantum mechanica treatment of the free carrier absorption by electrons in polar
semiconductors has been constructed in terms of the Kane model. It takes into account …

We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a
recently developed THz source to beyond 6 THz, and by measuring the absorption …

Disorder‐induced inhomogeneity in blue‐fluorescent‐based organic light‐emitting diodes
(OLEDs) based on mixtures of host and guest molecules is studied using magneto …

GaAs-based terahertz quantum-cascade lasers (QCLs) are continuously tuned in their
emission frequency by illuminating the rear facet with a near-infrared, high-power diode …

The reflectivity of n− CdTe has been measured between 16 and 203 cm− 1 at room
temperature. The single-crystal samples had carrier concentrations N between 5× 10 16 and …

抄録< jats: title> Abstract</jats: title>< jats: p> The eleven‐parameter rigid‐ion model is used
to describe the lattice dynamics of GaAs. The model gives a satisfactory description of …

β-Ga 2 O 3 is an ultra-wide bandgap semiconductor and is thus expected to be optically
transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this …