Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium
M Aït‐Lhouss, JL Castaño, BJ García… - Journal of applied …, 1995 - pubs.aip.org
GaAs growth by atomic layer epitaxy (ALE) from tertiarybutylarsine (TBA) and triethylgallium
(TEG) in a chemical beam epitaxy (CBE) system is reported. A stable 4X8 surface …
(TEG) in a chemical beam epitaxy (CBE) system is reported. A stable 4X8 surface …
Micro-Raman study of UV laser ablation of GaAs and Si substrates
C Garci, J Ramos, AC Prieto, J Jime, C Geertsen… - Applied surface …, 1996 - Elsevier
Laser ablation of semiconductors presents an increasing interest for different purposes, such
as surface modification. Morphologic and structural changes induced by UV-pulsed laser …
as surface modification. Morphologic and structural changes induced by UV-pulsed laser …
A model for optical absorption of amorphous GaAs in the far-infrared range by using an operational technique
MA Grado-Caffaro, M Grado-Caffaro - Modern Physics Letters B, 1999 - World Scientific
By considering a sample of amorphous GaAs with a small zone of dynamical disorder, an
expression for the optical absorption coefficient and phonon density of states in the low …
expression for the optical absorption coefficient and phonon density of states in the low …
Raman Spectroscopy
J Jimenez, JW Tomm, J Jimenez, JW Tomm - Spectroscopic Analysis of …, 2016 - Springer
Deals with lattice vibrations studied by Raman spectroscopy. First, a description of the
fundamentals of this technique is provided. Special emphasis is paid to a detailed …
fundamentals of this technique is provided. Special emphasis is paid to a detailed …
Raman characterization of GaAs doped with Sn by laser assisted diffusion
GaAs was heavily doped with Sn by a laser assisted diffusion procedure. The energy density
of the laser was varied between 0.3 and 0.7 J cm− 2. MicroRaman spectroscopy was used to …
of the laser was varied between 0.3 and 0.7 J cm− 2. MicroRaman spectroscopy was used to …
Microraman Study of Laser Ablated Gaas
Morphologic and structural changes induced by UV pulsed laser beams on GaAs are
studied by means of surface inspection (optical interferometry) and MicroRaman …
studied by means of surface inspection (optical interferometry) and MicroRaman …
Micro-Raman Spectroscopy of Semiconductors: Principles and Applications
J Jiménez, I De Wolf… - … of Optoelectronic Materials, 2003 - taylorfrancis.com
Raman spectroscopy is a powerful experimental technique, extensively used for the
characterization of semiconductors [1, 2, 8]. Because it gives information about elementary …
characterization of semiconductors [1, 2, 8]. Because it gives information about elementary …
Laser Melting and Recrystallization of Bulk Si by Nanosecond UV Laser Pulses
Laser ablation of semiconductors presents an increasing interest for both thin film growth
and surface modification. We present herein a study of the damage produced in bulk silicon …
and surface modification. We present herein a study of the damage produced in bulk silicon …
Departamento de Fisica de la Materia Condensada Facultad de Ciencias Universidad de Valladolid Valladolid, Spain
T Jawhari - Handbook of Advanced Materials Testing, 1994 - books.google.com
The use of Raman spectroscopy in the study of microscopic particles (micrometer-size
particles) was suggested in the midsixties (1, 2) as a consequence of the rapid development …
particles) was suggested in the midsixties (1, 2) as a consequence of the rapid development …