Provided is a substrate processing method capable of preventing over-etching of a part of a
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …

2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition
and related semiconductor device structures are provided. In some embodiments, methods …

The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …

A method for depositing a metal film onto a substrate is disclosed. In particular, the method
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …

A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …

Provided is a method of depositing a thin film on a pattern structure of a semiconductor
substrate, the method including (a) supplying a source gas;(b) supplying a reactive gas; and …

A method for forming a forming a semiconductor structure is disclosed. The method may
include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …

2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …