The role of arsenic in the operation of sulfur-based electrical threshold switches
R Wu, R Gu, T Gotoh, Z Zhao, Y Sun, S Jia… - Nature …, 2023 - nature.com
Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging
phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the …
phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the …
Microlenses formation on surface of stoichiometric Ge-As-S bulk glasses by CW laser direct writing
P Kutálek, E Samsonova, J Smolík, P Knotek… - Applied Surface …, 2023 - Elsevier
Laser direct writing using continuous-wave laser emitting at 532 nm was successfully
performed into stoichiometric (GeS 2) x (As 2 S 3)(1-x) bulk glasses, where 0≤ x≤ 1. The …
performed into stoichiometric (GeS 2) x (As 2 S 3)(1-x) bulk glasses, where 0≤ x≤ 1. The …
On the parameters influencing the formation of microelements in the Ge-As-S glasses by visible CW laser direct writing
P Kutálek, E Samsonova, J Smolík, P Knotek… - Applied Surface …, 2024 - Elsevier
CW laser direct writing was successfully performed into the Ge-As-S annealed bulk glasses
having different mean coordination numbers (CN) ranging between 2.32 and 2.67. Visible …
having different mean coordination numbers (CN) ranging between 2.32 and 2.67. Visible …
Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region
The Raman scattering of bulk nonstoichiometric chalcogenide alloys along the pseudo-
binary AsS 3–GeS 4 tie-line, which completely lies in the intermediate phase (IP) region of …
binary AsS 3–GeS 4 tie-line, which completely lies in the intermediate phase (IP) region of …
Short‐range order and topology of Te‐rich amorphous Ge–Sb–Te alloys
I Pethes, A Piarristeguy, A Pradel… - Journal of the …, 2025 - Wiley Online Library
The structure of evaporated amorphous GexSbxTe100− 2x (x= 6, 9, 13) alloys was
investigated by neutron diffraction, X‐ray diffraction, and extended X‐ray absorption …
investigated by neutron diffraction, X‐ray diffraction, and extended X‐ray absorption …
First Sharp Diffraction Peak features of the intermediate phase glasses and amorphous thin films in the non-stoichiometric (GeS4) x (AsS3) 1-x system
Grazing incidence X-ray scattering (GIXRS) patterns of thin solid films based on non-
stoichiometric chalcogenide glasses (ChG) from the pseudo-binary system (GeS 4) x (AsS 3) …
stoichiometric chalcogenide glasses (ChG) from the pseudo-binary system (GeS 4) x (AsS 3) …
[PDF][PDF] X-ray diffraction and Raman spectroscopy studies of Ga-Ge-Te alloys
AV Stronski, KV Shportko, HK Kochubei… - Semiconductor …, 2024 - journal-spqeo.org.ua
The structure and vibrational properties of glassy Ge19Te81 and Ga7. 9Ge11. 5Te80. 6
alloys were studied using X-ray diffraction and Raman spectroscopy. The amorphous nature …
alloys were studied using X-ray diffraction and Raman spectroscopy. The amorphous nature …