We study the insulator-quantum Hall conductor transition in two high-density gated
InGaAs/InAlAs quantum well samples. We observe a well-defined critical magnetic field and …

A delta-doped quantum well with additional modulation doping may have potential
applications. Utilizing such a hybrid system, it is possible to experimentally realize an …

We report on magnetotransport studies of Al 0.15 Ga 0.85 N∕ Ga N high electron mobility
transistor (HEMT) structures grown on p-type Si (111) substrates. A small but significant …

We have performed magnetotransport measurements on a multi-layer graphene flake. At the
crossing magnetic field B c, an approximately temperature-independent point in the …

A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from
the insulating regime to a high Landau level filling factor ν> 2 QH state. Such a transition has …

The mobility of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures
changes significantly with Al content in the AlGaN layer and also determined from …

We report on experimental studies of Al 0.15 Ga 0.85 N∕ Ga N high electron mobility
transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin …

By applying a magnetic field perpendicular to GaAs/AlGaAs two-dimensional electron
systems, we study the low-field Landau quantization when the thermal damping is reduced …

We report on magnetotransport studies of Al0. 15Ga0. 85N/GaN high electron mobility
transistor (HEMT) structures grown on p-type Si (111) substrates. Both weak localization …

Recently significant progress has been made in developing III-V nitride materials. As a
result, heterostructures based on nitrides such as AlGaN, GaN, InGaN, and InN have been …