On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component …
A Efremov, BJ Lee, KH Kwon - Materials, 2021 - mdpi.com
This work summarizes the results of our previous studies related to investigations of reactive
ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2 …
ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2 …
Review on vacuum ultraviolet generation in low‐pressure plasmas
Low‐pressure nonequilibrium plasmas can be a source of intense radiation in the vacuum
ultraviolet (VUV) range which can play an important role in the surface modification of solid …
ultraviolet (VUV) range which can play an important role in the surface modification of solid …
Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
MR Baklanov, V Jousseaume, TV Rakhimova… - Applied Physics …, 2019 - pubs.aip.org
This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …
advanced interconnect technology. UV light application in BEOL historically was mainly …
Physiochemical etching characteristics and surface analysis of Y2O3-MgO nanocomposite under different CF4/Ar/O2 plasma atmospheres
During plasma etching in the semiconductor manufacturing process, not only the wafers but
also the ceramic components that make up the interior of the chamber are influenced by the …
also the ceramic components that make up the interior of the chamber are influenced by the …
On mechanisms influencing etching/polymerization balance in multi-component fluorocarbon gas mixtures
A Efremov, HJ Son, G Choi, KH Kwon - Vacuum, 2022 - Elsevier
In this work, we performed both experimental and model-based study of plasma parameters,
steady-state gas phase compositions and heterogeneous process kinetics in CF 4+ C 4 F 8+ …
steady-state gas phase compositions and heterogeneous process kinetics in CF 4+ C 4 F 8+ …
Concerning the effect of type of fluorocarbon gas on the output characteristics of the reactive-ion etching process
AM Efremov, DB Murin, KH Kwon - Russian Microelectronics, 2020 - Springer
The comparative research of the parameters, steady-state composition, and the effects of
heterogeneous interaction in the plasma of fluorocarbon gases C x H y F z with various z/x …
heterogeneous interaction in the plasma of fluorocarbon gases C x H y F z with various z/x …
A Comparison of CF4, CHF3 and C4F8 + Ar/O2 Inductively Coupled Plasmas for Dry Etching Applications
N Lim, A Efremov, KH Kwon - Plasma Chemistry and Plasma Processing, 2021 - Springer
In this work, we performed the comparative study of plasma parameters, steady-state gas
phase compositions and Si reactive-ion etching kinetics in CF 4+ O 2+ Ar, CHF 3+ O 2+ Ar …
phase compositions and Si reactive-ion etching kinetics in CF 4+ O 2+ Ar, CHF 3+ O 2+ Ar …
On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF4, CHF3, and C4F8 Gases Mixed with Oxygen
SY Baek, A Efremov, A Bobylev, G Choi, KH Kwon - Materials, 2023 - mdpi.com
In this work, we discuss the effects of component ratios on plasma characteristics, chemistry
of active species, and silicon etching kinetics in CF4+ O2, CHF3+ O2, and C4F8+ O2 gas …
of active species, and silicon etching kinetics in CF4+ O2, CHF3+ O2, and C4F8+ O2 gas …
Spectral methods of control of impurities, their flows and localization in an equilibrium low-temperature plasma of low pressure
AV Bernatskiy, IV Kochetov, VN Ochkin - Plasma physics reports, 2020 - Springer
The state-of-art of studies of processes involving small fractions of particles formed as a
result of chemical transformations of the source gas or appearing from the outside as an …
result of chemical transformations of the source gas or appearing from the outside as an …
Fundamental study towards a better understanding of low pressure radio-frequency plasmas for industrial applications
YX Liu, QZ Zhang, K Zhao, YR Zhang, F Gao… - Chinese …, 2022 - iopscience.iop.org
Two classic radio-frequency (RF) plasmas, ie, the capacitively and the inductively coupled
plasmas (CCP and ICP), are widely employed in material processing, eg, etching and thin …
plasmas (CCP and ICP), are widely employed in material processing, eg, etching and thin …