Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode

Q Li, X Kang, H Wu, R Zhao, Y Zheng… - Japanese Journal of …, 2024 - iopscience.iop.org
In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed.
NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two …
被引用次数：1 相关文章 所有 2 个版本
[PDF] liverpool.ac.uk

Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO Passivation Layer Under On-State Stress Bias

YX Lin, DS Chao, JH Liang, YL Shen… - … on Electron Devices, 2024 - ieeexplore.ieee.org
On-state stress induced device degradation of gallium nitride quasivertical Schottky barrier
diode (SBD) with SiO2 passivation layer was investigated in this article. The devices were …
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Mixers

X Ke - Handbook of Optical Wireless Communication, 2024 - Springer
Mixer is an indispensable component in electronic communication system, and it is the
frontend circuit of heterodyne receiver and microwave measuring instrument, which is used …
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Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

T González, B Orfao, S Pérez, J Mateos… - Applied Physics …, 2023 - iopscience.iop.org
This work shows that for a correct analysis of Schottky barrier diodes operating under strong
reverse-bias conditions, it is necessary to account for the self-consistency between the …
被引用次数：1 相关文章 所有 2 个版本

Design and Optimization of a Low-Noise Mixer Using Advanced Design System (ADS) for RF Applications

X Hao, X Wang, S Chen, Z Zu, Z Li… - 2024 IEEE 7th …, 2024 - ieeexplore.ieee.org
In RF circuits, the mixer is an important component of the front-end circuit to achieve
frequency conversion. A mixer design method for improving noise figure and conversion …
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[PDF] uab.es

[PDF][PDF] Modelling of Schottky-Barrier Diodes Operating under Strong Reverse-Bias Conditions

B Orfao, BG Vasallo, S Pérez, J Mateos, T González - iwcn2023.uab.es
Modelling of Schottky‐Barrier Diodes Operating under Strong Reverse‐Bias Conditions Page 1
Modelling of Schottky‐Barrier Diodes Operating under Strong Reverse‐Bias Conditions Beatriz …
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