In this review, we introduce the current state of the art of the growth technology of pure,
lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals …

The effect of γ-irradiation, concentration of Eu 2+ ions, cationic substitution of components
(Ga→ Al) on photoluminescence (PL) of Ca (Al x Ga 1-x) 2 S 4: Eu 2+ solid solutions was …

The solid solutions of Ca x Ba 1− x Ga 2 S 4 (x= 0, 0. 1,…, 1) were synthesized by solid-
phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature …

Cu2Te single crystal was grown by the Bridgman method. X-ray diffraction (XRD) study of
Cu2Te single crystals in the temperature range of 293–893 K was performed and possible …

We have studied the temperature dependence of carrier mobility (μ) in undoped and
gadolinium-doped p-GaSe crystals. The results demonstrate that, in the temperature range …

Photoconductivity characteristic of undoped and gadolinium (Gd)/dysprosium (Dy) co-doped
layered p-GaSe semiconductor has been experimentally investigated. A model is proposed …

In this study, we experimentally study the dependence of the intensity of laser radiation
incident on and transmitted through a layered InSe crystal. A picosecond YAG: Nd3+ laser …

The concentrations of forming defects during phase transitions (PTs) and elastic coefficients
in the Cu 1. 9 5 Ni 0. 0 5 S compound were determined based on differential thermal …

Photoluminescence properties of Ca 4 Ga 2 S 7: Eu 2+ chalcogenide semiconductors have
been studied under the impulse laser excitation in the range of 10–105 W/cm2 at room …

In this paper, the distribution in electric durability (τ E) of polymers in constant electric field at
low temperatures has been measured. The results of continuous experiments and …