Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed …

Y Han, Y Wang, S Fu, J Ma, H Xu, B Li, Y Liu - Small, 2023 - Wiley Online Library
Abstract An excellent broad‐spectrum (220–380 nm) UV photodetector, covering the UVA‐
UVC wavelength range, with an ultrahigh detectivity of≈ 1015 cm Hz1/2 W− 1, is reported. It …

Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials

N Alfaraj, JW Min, CH Kang, AA Alatawi… - Journal of …, 2019 - iopscience.iop.org
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

The road ahead for ultrawide bandgap solar-blind UV photodetectors

A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

M Labed, JY Moon, SI Kim, JH Park, JS Kim… - ACS …, 2024 - ACS Publications
Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga2O3 have
significantly enhanced the functionality of electronic and optoelectronic devices, particularly …

Ultrahigh sensitivity graphene/nanoporous GaN ultraviolet photodetectors

J Li, X Xi, S Lin, Z Ma, X Li, L Zhao - ACS applied materials & …, 2020 - ACS Publications
Integration of graphene with three-dimensional semiconductors can introduce unique optical
and electrical properties that overcome the intrinsic limitation of the materials. Here, we …

A high responsivity and controllable recovery ultraviolet detector based on a WO 3 gate AlGaN/GaN heterostructure with an integrated micro-heater

J Sun, S Zhang, T Zhan, Z Liu, J Wang, X Yi… - Journal of Materials …, 2020 - pubs.rsc.org
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a
tungsten oxide (WO3) gate AlGaN/GaN heterostructure with an integrated micro-heater is …

Room-temperature-operated fast and reversible vertical-heterostructure-diode gas sensor composed of reduced graphene oxide and AlGaN/GaN

A Bag, DB Moon, KH Park, CY Cho, NE Lee - Sensors and Actuators B …, 2019 - Elsevier
A vertical heterostructure diode (VHD) based on a van der Waals heterojunction between
reduced graphene oxide (rGO) and Al 0.3 Ga 0.7 N/GaN/sapphire was fabricated for use in …

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure

B Pandit, HS Jang, Y Jeong, S An… - Advanced Materials …, 2023 - Wiley Online Library
The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts
huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the …

Anomalous photovoltaic response of graphene-on-GaN Schottky photodiodes

JH Lee, WW Lee, DW Yang, WJ Chang… - … applied materials & …, 2018 - ACS Publications
Graphene has attracted great attention as an alternative to conventional metallic or
transparent conducting electrodes. Despite its similarities with conventional electrodes …

Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed

H Tian, Q Liu, A Hu, X He, Z Hu, X Guo - Optics express, 2018 - opg.optica.org
In this work, we explore the possibility of using hybrid graphene/GaN phototransistors to get
high responsivity, high speed, and large photosensitive area. The responsivity of our hybrid …