Characteristics of ferromagnetic schottky diodes on heavily n-doped GaN semiconductor

Double Gaussian barrier distribution of permalloy (Ni0. 8Fe0. 2) Schottky contacts to n-type GaN

V Janardhanam, I Jyothi, PRS Reddy, J Cho… - Superlattices and …, 2018 - Elsevier
The temperature-dependent current-voltage (IV) characteristics of permalloy (Ni 0.8 Fe 0.2)
Schottky contacts to n-type GaN have been investigated. Magnetization measurements …
被引用次数：20 相关文章 所有 2 个版本

Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

L Efthymiou, G Longobardi, G Camuso… - 2015 International …, 2015 - ieeexplore.ieee.org
This paper describes a method to extract the ideality factor, barrier height and series
resistance of a lateral AlGaN/GaN heterostructure power Schottky diode using a simple IV …
被引用次数：7 相关文章 所有 2 个版本