For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …

As silicon-based electronics approach the limit of improvements to performance and
capacity through dimensional scaling, attention in the semiconductor field has turned to …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Terahertz (THz) oscillators based on resonant tunneling diodes (RTDs) have relatively low
output power, tens to hundreds of microwatts. The conventional designs employ submicron …

Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-
band digital and mixed-signal integrated circuits (ICs). Devices fabricated in high-yield …

Due to Fermi level pinning (FLP), metal‐semiconductor contact interfaces result in a
Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to …

The authors report specific contact resistance (ρ c) values for Mo-, Ti-, TiW-, Pd-, and Pt-
based Ohmic contacts to n+-In 0.86 Ga 0.14 As that are deposited with either collimated …

In this work, we introduce a novel nonalloyed contact structure for n-GaAs and n-In 0.53 Ga
0.47 As by using single metals in combination with a thin dielectric to tune the effective …

We calculate the minimum feasible contact resistivity to n-type and p-type In 0.53 Ga 0.47
As, InAs, GaAs, GaSb, InP, and InSb. The calculations consider image force lowering and …

The authors report ultralow specific contact resistivity (ρ c) in nonalloyed, in situ Ohmic
contacts to heavily doped n-type In 0.53 Ga 0.47 As: Si layers with 6× 10 19 cm− 3 active …