[HTML][HTML] Tunnel junctions for III-V multijunction solar cells review

P Colter, B Hagar, S Bedair - Crystals, 2018 - mdpi.com
Tunnel Junctions, as addressed in this review, are conductive, optically transparent
semiconductor layers used to join different semiconductor materials in order to increase …

Tunnel-junction-limited multijunction solar cell performance over concentration

AW Walker, O Thériault, MM Wilkins… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
The simulation of tunnel junctions is performed by using nonlocal band-to-band and trap
assisted tunneling models that are capable of reproducing the experimental current-voltage …

[图书][B] Bandgap engineering of multi-junction solar cells using nanostructures for enhanced performance under concentrated illumination

AW Walker - 2013 - search.proquest.com
This doctorate thesis focuses on investigating the parameter space involved in numerically
modeling the bandgap engineering of a GaInP/InGaAs/Ge lattice matched multi-junction …

Ⅲ-Ⅴ 多结太阳电池隧道结模型的研究进展

陈帅, 杨瑞霞, 吴亚美 - 微纳电子技术, 2015 - cqvip.com
强调了隧道结模型在Ⅲ-Ⅴ 多结太阳电池(MJSC) 分析和模拟仿真中的重要性.
介绍了隧道结的基本概念, 并根据重要性程度, 对隧道结主要的几种隧穿机制以及每种隧穿机制 …

[PDF][PDF] Croissance du GaInAs par épitaxie hybride et investigation de l'éffet mémoire du germanium dans un réacteur III-V CBE pour des applications …

ABP Mbeunmi - 2020 - savoirs.usherbrooke.ca
Au cours des dernières années, les énergies renouvelables et les technologies vertes se
sont répandues afin de répondre au besoin de l'Homme tout en préservant l'environnement …

Bandgap Engineering of Multi-Junction Solar Cells for Enhanced Performance Under Concentration

AW Walker - 2013 - ruor.uottawa.ca
This doctorate thesis focuses on investigating the parameter space involved in numerically
modeling the bandgap engineering of a GaInP/InGaAs/Ge lattice matched multi-junction …