GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
The drain induced dynamic threshold voltage () shift of a-GaN gate HEMT with a Schottky
gate contact is investigated, and the underlying mechanisms are explained with a charge …
gate contact is investigated, and the underlying mechanisms are explained with a charge …
Planar GaN power integration–the world is flat
GaN power IC's are expected to help unlock the full potential of GaN power electronics,
especially in terms of promoting the high-frequency power switching applications. This …
especially in terms of promoting the high-frequency power switching applications. This …
Multi-channel tri-gate GaN power Schottky diodes with low ON-resistance
J Ma, G Kampitsis, P Xiang, K Cheng… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
In this letter, we demonstrate high-performance lateral GaN power Schottky barrier diodes
based on a novel multi-channel tri-gate architecture. A significant reduction in ON-resistance …
based on a novel multi-channel tri-gate architecture. A significant reduction in ON-resistance …
Simulation study of a power MOSFET with built-in channel diode for enhanced reverse recovery performance
A new silicon power MOSFET architecture is proposed by introducing a built-in channel
diode through a dummy MOS gate electrically coupled to the source. The oxide thickness of …
diode through a dummy MOS gate electrically coupled to the source. The oxide thickness of …
Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation
Hot electrons with high kinetic energy could be generated in the channel of GaN high-
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
Fast-switching tri-anode Schottky barrier diodes for monolithically integrated GaN-on-Si power circuits
Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC
performance with low turn-on voltage and large breakdown thanks to their 3D contact …
performance with low turn-on voltage and large breakdown thanks to their 3D contact …
Low Reverse Conduction Loss β-Ga2O3 Vertical FinFET With an Integrated Fin Diode
Y Wei, X Peng, Z Jiang, T Sun, J Wei… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, a reverse conduction beta-phase gallium oxide (-Ga 2 O 3 vertical FinFET with
an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with …
an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with …
-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction
A 700-V normally-off p-GaN gate power transistor with distributed built-in Schottky barrier
diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately …
diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately …
An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT
A systematic analytical investigation of the charge distribution and gate control of the
normally-off GaN double-channel MOS-HEMT (DC-MOS-HEMT) is presented in this paper …
normally-off GaN double-channel MOS-HEMT (DC-MOS-HEMT) is presented in this paper …