Atomic layer deposition of chalcogenides for next-generation phase change memory
Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting,
sequential reactions localized at the growing film surface. It guarantees exceptional …
sequential reactions localized at the growing film surface. It guarantees exceptional …
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic
Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis …
Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis …
Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3 Thin Films
Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor
deposition (MOCVD). The films were grown on crystalline Si (100) and Al2O3 (0001) and …
deposition (MOCVD). The films were grown on crystalline Si (100) and Al2O3 (0001) and …
Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage
An ovonic threshold switch (OTS) based on amorphous chalcogenide materials possesses
several desirable characteristics, including high selectivity and fast switching speed …
several desirable characteristics, including high selectivity and fast switching speed …
Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms
In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and
ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3) 3Si) 2Te were used as …
ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3) 3Si) 2Te were used as …
Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory
This paper introduces a new atomic layer deposition process for highly conformal,
nanocrystalline-as-deposited GeTe–Sb2Te3 pseudobinary film growth at a deposition …
nanocrystalline-as-deposited GeTe–Sb2Te3 pseudobinary film growth at a deposition …
Ethylene oxidation on unpromoted silver catalysts: Reaction pathway and selectivity analysis using DFT calculations
Chemical conversions in catalytic partial oxidation processes of light hydrocarbons are
responsible for the production of numerous industrial chemicals, plastics, and intermediates …
responsible for the production of numerous industrial chemicals, plastics, and intermediates …
Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application
For phase change memories application, Ge–Sb–Te films were prepared by a stable and
reliable atomic layer deposition (ALD) method. Ge (OC2H5) 4, Sb (OC2H5) 3,[(CH3) 3Si] …
reliable atomic layer deposition (ALD) method. Ge (OC2H5) 4, Sb (OC2H5) 3,[(CH3) 3Si] …
High Volatile Antimony (III) Precursors for Metal Oxide Thin Film Deposition
We report the synthesis and characterization of novel antimony (III) complexes: Sb (mpa) 3
(1), Sb (mmpa) 3 (2), Sb (mdpa) 3 (3), Sb (epa) 3 (4), Sb (empa) 3 (5), and Sb (edpa) 3 …
(1), Sb (mmpa) 3 (2), Sb (mdpa) 3 (3), Sb (epa) 3 (4), Sb (empa) 3 (5), and Sb (edpa) 3 …
Cobalt-catalyzed nitrile hydrogenation: Insights into the reaction mechanism and product selectivity from DFT analysis
G Lozano-Blanco, AJ Adamczyk - Surface Science, 2019 - Elsevier
When primary amines are the desired product of nitrile hydrogenation, the use of cobalt
catalysts are commonly recommended. Nitrile hydrogenation using heterogeneous catalysis …
catalysts are commonly recommended. Nitrile hydrogenation using heterogeneous catalysis …