Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very
interesting owing to their potential application in magnetic storage or sensor devices. Here …

Wires having a width of one or two atoms are the smallest possible physical objects that may
exhibit one-dimensional properties. In order to be experimentally accessible at finite …

The passivation of thin Bi (1 1 1) films with hydrogen and oxide capping layers is
investigated from first principles. Considering termination-related changes of the crystal …

Confining materials to two-dimensional forms changes the behaviour of the electrons and
enables the creation of new devices. However, most materials are challenging to produce as …

The electronic band structure of Bi is calculated using state of the art electronic structure
methods, including density functional theory and G 0 W 0 quasiparticle approximations. The …

Due to the small indirect overlap of the valence and conduction bands, as well as the small
direct band gap sensitive to external impact, bismuth is of great interest for stress …

The complex behavior of magnetoconductance of Bi films grown epitaxially on Si (111) with
a thickness of 20–100 bilayers (BL) was measured at T= 9 K in magnetic fields up to B= 4 T …

Since the energy spectrum of bismuth charge carriers is highly sensitive to mechanical
deformations, studying their influence, leading to an increase or decrease in the overlap of …

The heterostructure of bismuth (Bi) and Bi 2 Sr 2 CaCu 2 O 8+ δ (Bi2212) is considered as a
potential type of quantum material. The strain-engineering controls the band structure in the …

We report on electrical transport measurements of ballistic Bi constrictions with top and
bottom gate electrodes in which interference of their metalliclike surface states and …