Evaluation of Tradeoffs in the Design of FPGA Fabrics Using Electrostrictive 2-D FETs

S Baskaran, J Sampson - … on Very Large Scale Integration (VLSI …, 2021 - ieeexplore.ieee.org
The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to
offer aggressive length and voltage scalability. Two key features of this device are its high …

New directions of nanoelectronics research for computing

A Chen - 2018 14th IEEE International Conference on Solid …, 2018 - ieeexplore.ieee.org
Nanoelectronics research has generated a wide range of materials and devices with unique
characteristics that can be utilized in novel computing solutions, from low power switches for …

Cooptimization of emerging devices and architectures for energy-efficient computing

A Chen - 2017 IEEE 12th International Conference on ASIC …, 2017 - ieeexplore.ieee.org
As CMOS scaling approaches the fundamental limits, the search for beyond-CMOS switches
has intensified. After more than a decade of research on the “next switches” to replace …

[图书][B] A Study of Structure Induced Phase Phenomena in Perovskite Oxide Thin Films

JM Lapano - 2019 - search.proquest.com
The three core tenants of materials science are theory, synthesis, and characterization. A
solid theoretical framework is required for understanding of the problem at hand and using …