Atomistic simulations show that organosilicates, used as low permittivity dielectric materials
in advanced integrated circuits, can be made substantially stiffer than amorphous silica …

Back end of the line dielectrics (BEOL) with low dielectric constants, so called low-k
dielectrics, are needed for current and future integrated circuit technology nodes. However …

Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for
interconnects in state of the art integrated circuits. In order to further reduce interconnect RC …

Integrating nanometre sized pores into hybrid organic-inorganic interconnect layers is one of
the key approaches being undertaken by the semiconductor industry to sustain the …

Ultrathin films and multilayers, with controlled thickness down to single atomic layers, are
critical for advanced technologies ranging from nanoelectronics to spintronics to quantum …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

An ab initio approach with the density functional theory (DFT) method was used to study F
atom interactions with organosilicate glass (OSG)-based low-k dielectric films. Because of …

Surface Brillouin light scattering measurements are used to determine the elastic constants
of nano-porous low-k SiOC: H (165 nm) and high-k HfO 2 (25 nm) as well as BN: H (100 nm) …

To reduce the RC (resistance–capacitance) time delay of interconnects, a key development
of the past 20 years has been the introduction of porous low-k dielectrics to replace the …

We present a methodology to create computational atomistic-level models of porous
amorphous materials, in particular, an organosilicate structure for ultra-low dielectric …