As silicon technology enters sub-20nm nodes, new materials, structures and processes are
being introduced in order to continue with the advantages of dimensional scaling, eg, 3D …

We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

A method is provided for forming doped hafnium zirconium based films by atomic layer
deposition (ALD) or plasma enhanced ALD (PEALD). The method includes disposing a …

Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of
high-κ gate dielectrics via higher-κ (> 20) materials and interfacial layer (IL) scavenging …

With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …

Using a fluorinated high-fc/metal gate stack combined with a stress relieved preoxide
(SRPO) pretreatment before high-fc deposition, we show significant device reliability and …

Recent advances in microelectronics have included the use of high-k films in gate stacks for
logic applications. These high-k films often include hafnium (Hf) and/or zirconium (Zr) based …

Effects of high-kgate stacks and plasma treatments on electrical and reliability characteristics
of FinFET were comprehensively studied in this work. A higher ONcurrent, higher ON-/OFF …

A method for manufacturing a dual workfunction semiconductor device using a hybrid gate
last integration scheme is described. According to one embodiment, the method includes …

Abstract Effect of slot plane antenna (SPA) Ar plasma on the reliability of intermediate
plasma (DSDS) treated ALD Hf 1-x Zr x O 2 samples with x= 0, 0.31, 0.8 were investigated …